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NTP2955
ELECTRICAL CHARACTERISTIC S (T J =25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
? 60
67
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 48 V
T J = 25 ° C
T J = 125 ° C
? 1.0
? 10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 2.0
56
? 4.0
V
mV/ ° C
Drain ? to ? Source On Resistance
Forward Transconductance
R DS(on)
g FS
V GS = ? 10 V, I D = ? 12 A
V DS = ? 60 V, I D = ? 12 A
156
6.0
196
m W
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
507
700
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = ? 25 V
V GS = ? 10 V, V DS = ? 48 V,
I D = ? 12 A
150
48
14
1.6
3.4
6.2
250
98
2.5
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
10
20
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = ? 10 V, V DD = ? 30 V,
I D = ? 12 A, R G = 9.1 W
41
27
45
80
47
85
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 12 A
T J = 25 ° C
T J = 125 ° C
? 1.6
? 1.36
? 2.0
V
Reverse Recovery Time
t RR
53
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = ? 12 A
42
12
126
ns
nC
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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